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International Rectifier Electronic Components Datasheet

IPS042G Datasheet

DUAL FULLY PROTECTED POWER MOSFET SWITCH

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Data Sheet No.PD 60153-J
IPS042G
DUAL FULLY PROTECTED POWER MOSFET SWITCH
Features
Over temperature shutdown
Over current shutdown
Active clamp
Low current & logic level input
E.S.D protection
Description
The IPS042G is a fully protected dual low side SMART
POWER MOSFET that features over-current, over-tem-
perature, ESD protection and drain to source active
clamp.This device combines a HEXFET® POWER
MOSFET and a gate driver. It offers full protection
and high reliability required in harsh environments.
The driver allows short switching times and provides
efficient protection by turning OFF the power MOSFET
when the temperature exceeds 165oC or when the
drain current reaches 2A. This device restarts once
the input is cycled. The avalanche capability is
significantly enhanced by the active clamp and cov-
ers most inductive load demagnetizations.
Product Summary
Rds(on)
V clamp
Ishutdown
Ton/Toff
500m(max)
50V
2A
1.5µs
Package
8-Lead SOIC
Typical Connection
Load
R in series
(if needed)
IN
Q
Logic signal
control S
(Refer to lead assignment for correct pin configuration)
www.irf.com
D
S
1


International Rectifier Electronic Components Datasheet

IPS042G Datasheet

DUAL FULLY PROTECTED POWER MOSFET SWITCH

No Preview Available !

I31PS042G
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are ref-
erenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 µm
copper thickness.
Symbol Parameter
Min.
Vds
Vin
Iin, max
Isd cont.
Maximum drain to source voltage
Maximum input voltage
Maximum IN current
Diode max. continuous current (1)
(for all Isd mosfets, rth=125oC/W)
-0.3
-10
Isd pulsed Diode max. pulsed current (1)
Pd Maximum power dissipation(1)
(for all Pd mosfets, rth=125oC/W)
ESD1 Electrostatic discharge voltage (Human Body)
ESD2 Electrostatic discharge voltage (Machine Model)
T stor. Max. storage temperature
-55
Tj max. Max. junction temperature
-40
Max.
47
7
+10
Units
V
mA
Test Conditions
1.2 A
3
1W
4 C=100pF, R=1500Ω,
kV
0.5 C=200pF, R=0Ω, L=10µH
150
+150
oC
Thermal Characteristics
Symbol Parameter
Rth1
Thermal resistance with standard footprint
(2 mosfets on)
Rth2
Rth3
Thermal resistance with standard footprint
(1 mosfet on)
Thermal resistance with 1" square footprint
(2 mosfets on)
Min. Typ. Max. Units Test Conditions
100
125 oC/W
65
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min. Max. Units
Vds (max) Continuous Drain to Source voltage
VIH High level input voltage
VIL Low level input voltage
Ids Continuous drain current (both mosfets at this current)
Tamb=85oC
TAmbient = 85oC, IN = 5V, rth = 100oC/W, Tj = 125oC
Rin Recommended resistor in series with IN pin
Tr-in(max) Max recommended rise time for IN signal (see fig. 2)
Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V)
— 35
46
0 0.5
V
— 0.53
A
15
—1
k
µS
0 1 kHz
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
(2) Operations at higher switching frequencies is possible. See Appl. notes.
2
www.irf.com


Part Number IPS042G
Description DUAL FULLY PROTECTED POWER MOSFET SWITCH
Maker International Rectifier
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IPS042G Datasheet PDF






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