IR2105S Datasheet | International Rectifier

Features - Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage d V/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout 5V Schmitt-triggered input logic Cross-conduction prevention logic Internally set deadtime High side output in phase with input Match propagation delay for both channels Product Summary VOFFSET IO+/VOUT ton/off (typ.) Deadtime (typ.) 600V max. 130 m A / 270 m A 10 - 20V 680 & 150 ns 520 ns - - - - - - - Packages Description The IR2105 is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is patible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates from 10 to 600 volts. 8 Lead PDIP 8 Lead SOIC Typical Connection up to 600V VCC V CC VB HO VS TO LOAD IN LO IR2105 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to . The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol VB VS VHO VCC VLO VIN d Vs/dt PD Rth JA TJ TS TL Definition High side floating absolute voltage High side floating supply offset voltage High side floating output voltage Low side and logic fixed supply voltage Low side output voltage Logic input voltage Allowable offset supply voltage transient Package power dissipation @ TA ≤ +25°C Thermal resistance, junction to ambient Junction temperature Storage temperature Lead temperature (soldering, 10 seconds) (8 Lead DIP) (8 Lead SOIC) (8 Lead DIP) (8 Lead SOIC) Min. -0.3 VB...