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International Rectifier Electronic Components Datasheet

IR2105S Datasheet

High Voltage/ High Speed Power MOSFET and IGBT Driver

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Data Sheet No. PD60139J
IR2105
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout
5V Schmitt-triggered input logic
Cross-conduction prevention logic
Internally set deadtime
High side output in phase with input
Match propagation delay for both channels
Description
The IR2105 is a high voltage, high speed power
MOSFET and IGBT driver with dependent high and
low side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies en-
able ruggedized monolithic construction. The logic
input is compatible with standard CMOS or LSTTL
outputs. The output drivers feature a high pulse
current buffer stage designed for minimum driver
cross-conduction. The floating channel can be used
to drive an N-channel power MOSFET or IGBT in
the high side configuration which operates from 10
to 600 volts.
Typical Connection
HALF BRIDGE DRIVER
Product Summary
VOFFSET
600V max.
IO+/-
130 mA / 270 mA
VOUT
10 - 20V
ton/off (typ.)
680 & 150 ns
Deadtime (typ.)
520 ns
Packages
8 Lead PDIP
8 Lead SOIC
up to 600V
VCC
VCC
VB
IN IN HO
COM
LO
VS
TO
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International Rectifier Electronic Components Datasheet

IR2105S Datasheet

High Voltage/ High Speed Power MOSFET and IGBT Driver

No Preview Available !

IR2105
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol
VB
VS
VHO
VCC
VLO
VIN
dVs/dt
PD
RthJA
TJ
TS
TL
Definition
High side floating absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Logic input voltage
Allowable offset supply voltage transient
Package power dissipation @ TA +25°C
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
(8 Lead DIP)
(8 Lead SOIC)
(8 Lead DIP)
(8 Lead SOIC)
Min.
-0.3
VB - 25
VS - 0.3
-0.3
-0.3
-0.3
-55
Max.
625
VB + 0.3
VB + 0.3
25
VCC + 0.3
VCC + 0.3
50
1.0
0.625
125
200
150
150
300
Units
V
V/ns
W
°C/W
°C
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential.
Symbol
VB
VS
VHO
VCC
VLO
VIN
TA
Definition
High side floating supply absolute voltage
High side floating supply offset voltage
High side floating output voltage
Low side and logic fixed supply voltage
Low side output voltage
Logic input voltage
Ambient temperature
Min.
VS + 10
Note 1
VS
10
0
0
-40
Max.
VS + 20
600
VB
20
VCC
VCC
125
Units
V
°C
Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS.
2 www.irf.com


Part Number IR2105S
Description High Voltage/ High Speed Power MOSFET and IGBT Driver
Maker International Rectifier
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IR2105S Datasheet PDF






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