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IR21064PBF - HIGH AND LOW SIDE DRIVER

General Description

The IR2106(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels.

Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

Key Features

  • Floating channel designed for bootstrap operation Fully operational to +600V Packages Tolerant to negative transient voltage dV/dt immune.
  • Gate drive supply range from 10 to 20V (IR2106(4)).
  • Undervoltage lockout for both channels.
  • 3.3V, 5V and 15V input logic compatible.
  • Matched propagation delay for both channels.
  • Logic and power ground +/- 5V offset.
  • Lower di/dt gate driver for better noise immunity.
  • Outputs in phase.

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Full PDF Text Transcription for IR21064PBF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IR21064PBF. For precise diagrams, and layout, please refer to the original PDF.

Data Sheet No. PD60162 Rev. W IR2106(4)(S) & (PbF) HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Packag...

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nel designed for bootstrap operation Fully operational to +600V Packages Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V (IR2106(4)) • Undervoltage lockout for both channels • 3.3V, 5V and 15V input logic compatible • Matched propagation delay for both channels • Logic and power ground +/- 5V offset.