IR2117SPBF
Features
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Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage d V/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout CMOS Schmitt-triggered inputs with pull-down Output in phase with input (IR2117) or out of phase with input (IR2118) Also available LEAD-FREE
Product Summary
VOFFSET IO+/VOUT ton/off (typ.) 600V max. 200 m A / 420 m A 10
- 20V 125 & 105 ns
Description
The IR2117/IR2118(S) is a high voltage, high speed power MOSFET and IGBT driver . Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is patible with standard CMOS outputs. The output driver features a high pulse current buf fer stage designed for minimum cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 600 volts.
Packages
8-Lead PDIP IR2117/IR2118
8-Lead SOIC...
