IRCZ34 mosfet equivalent, power mosfet.
TO-220 HexSense
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS dv/dt TJ .
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and cost-effectiveness. The HEXSence device provides an accurate fraction of the drain curren.
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