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IRCZ44 - Power MOSFET

General Description

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and cost-effectiveness.

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Full PDF Text Transcription for IRCZ44 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRCZ44. For precise diagrams, and layout, please refer to the original PDF.

PD - 9.529B IRCZ44 HEXFET® Power MOSFET l l l l l l Dynamic dv/dt Rating Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Require...

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ng Temperature Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 60V RDS(on) = 0.028Ω ID = 50*A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and cost-effectiveness. The HEXSense device provides an accurate fraction of the drain current through the additional two leads to be used for control or protection of the device. These devices exhibit similar electrical and thermal characteristics as their IRF-series equivalent part numbers.

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