IRC4BC40F

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

* Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).

* Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

* Industry standard TO-220AB package C Fast Speed IGBT VCES

IRC4BC40F

International Rectifier

193.26 KB

Insulated gate bipolar transistor.

📁 Related Datasheet

IRC3020N13-B20 Infrared Emitter (CT Micro)

IRC3528Q19-B20 Infrared Emitter (CT Micro)

IRC530 Power MOSFET (International Rectifier)

IRC530PbF POWER MOSFET (International Rectifier)

IRC540 Power MOSFET (International Rectifier)

IRC540PbF POWER MOSFET (International Rectifier)

IRC630 Power MOSFET (International Rectifier)

IRC630PbF POWER MOSFET (International Rectifier)

IRC634 Power MOSFET (International Rectifier)

IRC634PbF POWER MOSFET (International Rectifier)

TAGS

Image Gallery