IRCZ24 Datasheet - International Rectifier

IRCZ24, Power MOSFET

PD - 9.615A IRCZ24 HEXFET® Power MOSFET l l l l l l Dynamic dv/dt Rating Current Sense 175°C Operating Temperature Fast Switching Ease of Parallelin.
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resi.

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IRCZ24_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRCZ24

Manufacturer:

International Rectifier

File Size:

145.79 KB

Description:

Power MOSFET

Applications

* TO-220 HexSense Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Ava

IRCZ24 Distributors

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IRCZ24 Power MOSFET International Rectifier

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