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IRF1010EL Datasheet - International Rectifier

Power MOSFET

IRF1010EL Features

* rop Ripple ≤ 5% [ ISD ]

* VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www.irf.com 7 IRF1010ES/IRF1010EL D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2 4.69 (.1 85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2

IRF1010EL General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the des.

IRF1010EL Datasheet (123.94 KB)

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Datasheet Details

Part number:

IRF1010EL

Manufacturer:

International Rectifier

File Size:

123.94 KB

Description:

Power mosfet.
PD - 91720 IRF1010ES IRF1010EL l l l l l l Advanced Process Technology Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175°C Operatin.

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IRF1010EL Power MOSFET International Rectifier

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