Unclamped Inductive Test Circuit V(BR)DSS tp 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Curre.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest powe.

l IRF1010ESPbF IRF1010ELPbF HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G S Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This bene.

IRF1010ES

IRF1010E

IRF1010EL

IRF1010ELPbF

IRF1010EPBF

IRF1010EZ

IRF1010EZL

IRF1010EZLPbF

IRF1010EZPbF

IRF1010EZS

IRF1010EZSPBF

IRF1010

IRF1010N