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International Rectifier Electronic Components Datasheet

IRF1010NSPBF Datasheet

Power MOSFET

No Preview Available !

l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
G
Description
Advanced HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
http://www.DataSheet4U.net/
The through-hole version (IRF1010NL) is available for low-
AprbofsileoalupptleicaMtioanxs.imum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V ˆ
Continuous Drain Current, VGS @ 10V ˆ
Pulsed Drain Current ˆ
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒˆ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
www.irf.com
PD - 95103
IRF1010NSPbF
IRF1010NLPbF
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 11m
ID = 85A‡
S
D 2 Pak
TO-262
IRF1010NSPbF IRF1010NLPbF
Max.
85‡
60
290
180
1.2
± 20
43
18
3.6
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
0.85
40
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Units
°C/W
1
03/11/04
datasheet pdf - http://www.DataSheet4U.net/


International Rectifier Electronic Components Datasheet

IRF1010NSPBF Datasheet

Power MOSFET

No Preview Available !

IRF1010NS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
EAS
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy‚ˆ
Min. Typ. Max. Units
55 ––– ––– V
––– 0.058 ––– V/°C
––– ––– 11 m
2.0 ––– 4.0 V
32 ––– ––– S
––– ––– 25
––– ––– 250
µA
–––
–––
––– 100
––– -100
nA
––– ––– 120
––– ––– 19 nC
––– ––– 41
––– 13 –––
–––
–––
76 –––
39 –––
ns
––– 48 –––
––– 4.5 –––
––– 7.5 –––
nH
–––
3210http://www.DataSheet4U.net/
–––
––– 690 –––
––– 140 –––
––– 1030…250†
pF
mJ
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA ˆ
VGS = 10V, ID = 43A „
VDS = VGS, ID = 250µA
VDS = 25V, ID = 43A„ˆ
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 43A
VDS = 44V
VGS = 10V, See Fig. 6 and 13 „ˆ
VDD = 28V
ID = 43A
RG = 3.6
VGS = 10V, See Fig. 10 „ˆ
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5 ˆ
S
IAS = 4.3A, L = 270µH
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 270µH
RG = 25, IAS = 43A, VGS=10V (See Figure 12)
ƒ ISD 43A, di/dt 210A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 400µs; duty cycle 2%.
… This is a typical value at device destruction and
represents operation outside rated limits.
2
Min. Typ. Max. Units
Conditions
––– ––– 85‡
––– ––– 290
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 43A, VGS = 0V „
––– 69 100 ns TJ = 25°C, IF = 43A
––– 220 230 nC di/dt = 100A/µs „ˆ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
† This is a calculated value limited to TJ = 175°C .
‡ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
ˆ Uses IRF1010N data and test conditions.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
www.irf.com
datasheet pdf - http://www.DataSheet4U.net/


Part Number IRF1010NSPBF
Description Power MOSFET
Maker International Rectifier
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IRF1010NSPBF Datasheet PDF






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