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IRF1302 Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 94591 AUTOMOTIVE MOSFET IRF1302 HEXFET® Power MOSFET D Benefits ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 20V G S RDS(on) = 4.

General Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Additional

Key Features

  • of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive.

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