IRF1302L mosfet equivalent, power mosfet.
of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an ex.
this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low o.
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C ju.
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