IRF1310N mosfet equivalent, power mosfet.
W. Period VGS=10V
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D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Indu.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to a.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power .
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