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* VDSS = 75V G S RDS(on) = 0.0126Ω ID = 75A Description Specifically designed for Automotive applications, this design of HEXFET® Power MOS.

* IRF3007 HEXFET® Power MOSFET D 42 Volts Automotive Electrical Systems Ultra Low On-Resistance 175°C Operating Te.

Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C ju.

IRF3000

IRF3000PBF

IRF3007L

IRF3007LPBF

IRF3007PbF

IRF3007S

IRF3007SPBF

IRF300P226

IRF305

IRF320

IRF3205

IRF3205A

IRF3205H