IRF3000PBF Key Features
- Lead-Free
- IRF3000PbF HEXFET® Power MOSFET RDS(on) max 0.40W@VGS = 10V VDSS 300V ID 1.6A Benefits
- Low Gate to Drain Charge to Reduce Switching Losses
- Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
- Fully Characterized Avalanche Voltage and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO