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IRF3007 - AUTOMOTIVE MOSFET

General Description

Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • VDSS = 75V G S RDS(on) = 0.0126Ω ID = 75A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD -94424A AUTOMOTIVE MOSFET Typical Applications ● IRF3007 HEXFET® Power MOSFET D 42 Volts Automotive Electrical Systems Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] Qualified Features ● ● ● ● ● VDSS = 75V G S RDS(on) = 0.0126Ω ID = 75A Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.