IRF3007L Datasheet | International Rectifier

Features - Ultra Low On-Resistance - 175°C Operating Temperature - Fast Switching - Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS EAS (6 sigma) IAR EAR TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Single Pulse Avalanche Energy Tested Value‡ Avalanche Current Repetitive Avalanche Energy† Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds HEXFET® Power MOSFET VDSS = 75V RDS(on) = 0.0126Ω ID = 62A D2Pak IRF3007S TO-262 IRF3007L Max. 62 44 320 120 0.8 ± 20 290 946 See Fig.12a, 12b, 15, 16 -55 to + 175 300 (1.6mm from case ) Units W W/°C V m J A m J °C Thermal Resistance RθJC RθJA Parameter Junction-to-Case Junction-to-Ambient (PCB Mounted,steady state)- - Typ. - - - - - - - - This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For remended footprint and soldering techniques refer to application note #AN-994. .irf. Max. 1.25...