IRF3007PbF Description
This design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.
IRF3007PbF Datasheet
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
IRF3007 | N-Channel MOSFET |
|
Inchange Semiconductor |
IRF3007L | N-Channel MOSFET |
|
Inchange Semiconductor |
IRF3007S | N-Channel MOSFET |
This design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.