IRF3007PbF Datasheet | International Rectifier

PD -95618A Typical Applications l Industrial Motor Drive Features l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. HEXFET® Power MOSFET VDSS = 75V RDS(on) = 0.0126Ω S ID =...