IRF3007PbF Overview
Key Specifications
Package: TO-220-3
Mount Type: Through Hole
Pins: 3
Height: 20.56 mm
Description
This design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Key Features
- l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
