IRF3315S Datasheet - International Rectifier

Power MOSFET

IRF3315S Features

* D IP . 2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 3 C O N T R O LLIN G D IM E N S IO N : IN C H . 4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S . LE A D A S S IG N M E N TS 1 - G A TE 2 - D R A IN 3 - SOURCE 8.89 (.350) 17.78 (.700) 3.81

IRF3315S General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRF3315S Datasheet (197.26 KB)

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IRF3315S

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International Rectifier

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197.26 KB

Description:

Power mosfet.
PD - 9.1617A PRELIMINARY l l l l l l IRF3315S/L HEXFET® Power MOSFET D Advanced Process Technology Surface Mount (IRF3315S) Low-profile through-hol.

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IRF3315S Power MOSFET International Rectifier

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IRF3315S Features

IRF3315S General Description

Datasheet Details

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