* n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C I DM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continu
IRF350
International Rectifier
144.84 KB
N-channel power mosfet.
PD - 90339F REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF350 BVDSS 400V RDS(on) .
📁 Related Datasheet
IRF350 N-Channel MOSFET (NTE)
IRF350 N-Channel MOSFET Transistor (Inchange Semiconductor)
IRF350 N-Channel Power MOSFET (Samsung semiconductor)
IRF350 N-Channel Power MOSFET (Intersil Corporation)
IRF350 N-Channel Power MOSFET (Fairchild Semiconductor)
IRF351 N-Channel MOSFET Transistor (Inchange Semiconductor)
IRF351 N-Channel Power MOSFET (Fairchild Semiconductor)
IRF351 N-Channel Power MOSFET (Samsung semiconductor)
IRF3515L Power MOSFET (International Rectifier)
IRF3515LPBF Power MOSFET (International Rectifier)
