IRF350 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF350 DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for Fast Switch

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PD - 90339F REPETITIVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF350 BVDSS 400V RDS(on)

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IRF350 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3 Type Package D Features: D Repetitive Avalanche Ratings D Dynamic dv/dt Rating D

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IRF350 Data Sheet March 1999 File Number 1826.3 15A, 400V, 0.300 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power

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PD - 97696A AUTOMOTIVE GRADE AUIRF3504 Features l Advanced Planar Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Ful

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