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IRF3704ZCSPBF - HEXFET Power MOSFET

Download the IRF3704ZCSPBF datasheet PDF (IRF3704ZCLPBF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for hexfet power mosfet.

Features

  • a sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSF.

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Note: The manufacturer provides a single datasheet file (IRF3704ZCLPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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www.DataSheet4U.com PD - 95107 IRF3704ZCSPbF IRF3704ZCLPbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free HEXFET® Power MOSFET VDSS RDS(on) max 20V 7.9m: Qg 8.7nC Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current D2Pak IRF3704ZCSPbF TO-262 IRF3704ZCLPbF Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 20 ± 20 67 47 Units V A c g g 260 57 28 0.38 -55 to + 175 300 (1.
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