IRF3707LPBF Description
Symbol VDS VGS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C TJ , TSTG Max. 30 ± 20 62 52 248 87 61 0.59 -55 to + 175 Units V V A W W mW/°C °C Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount) Typ. 1.73 62 40 Units °C/W When mounted on 1" square PCB (FR-4 or G-10 Material).
IRF3707LPBF Key Features
- IRF3707PbF IRF3707SPbF IRF3707LPbF HEXFET® Power MOSFET
- l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Tele and Industrial use High Fr
- Ultra-Low Gate Impedance
- l Very Low RDS(on) Fully Characterized Avalanche Voltage and Current Parameter Drain-Source Voltage Gate-to-S