IRF3710ZGPbF Power MOSFET

International Rectifier

Description

PD - 96349 .
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Specifications

Part number: IRF3710ZGPbF
Manufacturer: International Rectifier
File Size: 275.05 KB
Datasheet: IRF3710ZGPbF-InternationalRectifier.pdf
Description: Power MOSFET

Applications

* G IRF3710ZGPbF HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 18mΩ ID = 59A S TO-220AB IRF3710ZGPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) cPulsed

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IRF3710ZGPbF Power MOSFET International Rectifier

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