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IRF3808S Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Download the IRF3808S datasheet PDF. This datasheet also includes the IRF3808L variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF3808L_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

General Description

Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Additional

Overview

PD - 94338A AUTOMOTIVE MOSFET Typical Applications q q IRF3808S IRF3808L HEXFET® Power MOSFET D Integrated Starter Alternator 42 Volts Automotive Electrical Systems Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Benefits q q q q q q VDSS = 75V G S RDS(on) = 0.

Key Features

  • of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other.

📁 Similar Datasheet

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