IRF5210SPBF mosfet equivalent, power mosfet.
of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an e.
PD - 97049B
IRF5210SPbF IRF5210LPbF
HEXFET® Power MOSFET
D
VDSS = -100V
RDS(on) = 60mΩ
G
S
ID = -38A
D
D
S D G
.
Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of oth.
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