l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description .

IRF540ZPbF IRF540ZSPbF IRF540ZLPbF HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 26.5mΩ G ID = 36A S TO-220AB IRF540ZP.

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive a.

IRF540ZL

IRF540Z

IRF540ZPBF

IRF540ZS

IRF540ZSPBF

IRF540

IRF540A

IRF540FI

IRF540N

IRF540NL

IRF540NLPbF

IRF540NPbF

IRF540NPBF