These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
Full PDF Text Transcription for IRF5800PBF (Reference)
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PD - 96029 IRF5800PbF HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free D 1 6 A D...
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ace Mount Available in Tape & Reel Low Gate Charge Lead-Free D 1 6 A D VDSS = -30V D 2 5 D G 3 4 S RDS(on) = 0.085Ω Top View Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premi
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IRF5800PBF Datasheet
