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IRF5801PbF - Power MOSFET

Key Features

  • for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD.

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Full PDF Text Transcription for IRF5801PbF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRF5801PbF. For precise diagrams, and layout, please refer to the original PDF.

PD-95474B SMPS MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Includ...

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ge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Lead-Free l Halogen-Free l IRF5801PbF HEXFET® Power MOSFET VDSS 200V RDS(on) max 2.2W ID 0.6A 9 9 B ! " % $ # 9 9 T TSOP-6 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt † Operating Junction and Storage Te

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