IRF5802PbF mosfet equivalent, power mosfet.
o 80% VDSS
Starting TJ = 25°C, L = 23mH
RG = 25Ω, IAS = 0.54A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
ISD ≤ 0.54A, di/dt ≤ 89A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Dat.
l High frequency DC-DC converters Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized C.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 137.10KB)