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International Rectifier Electronic Components Datasheet

IRF5803D2PbF Datasheet

Power MOSFET & Schottky Diode

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PD- 95160A
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l Ideal For Buck Regulator Applications
l P-Channel HEXFET®
l Low VF Schottky Rectifier
l SO-8 Footprint
l Lead-Free
Description
The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. HEXFETs utilize
advanced processing techniques to achieve extremely
low on-resistance per silicon area. Combining this
technology with International Rectifier's low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
IRF5803D2PbF
FETKY TM MOSFET & Schottky Diode
A1
A2
8K
7K
VDSS = -40V
S3
6 D RDS(on) = 112m
G4
5D
Schottky Vf = 0.51V
Top View
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Parameter
Maximum
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
-3.4
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current À
-2.7
-27
PD @TA = 25°C
Power Dissipation
2.0
PD @TA = 70°C
Power Dissipation
1.3
Linear Derating Factor
16
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
± 20
-55 to +150
SO-8
Units
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
RθJL
RθJA
RθJA
Parameter
Junction-to-Drain Lead, MOSFET
Junction-to-Ambient ƒ, MOSFET
Junction-to-Ambient ƒ, SCHOTTKY
Typ.
–––
–––
–––
Notes:
 Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
‚ Pulse width 400µs – duty cycle 2%
ƒ Surface mounted on 1 inch square copper board, t 10sec.
Max.
20
62.5
62.5
Units
°C/W
www.irf.com
1
10/7/04


International Rectifier Electronic Components Datasheet

IRF5803D2PbF Datasheet

Power MOSFET & Schottky Diode

No Preview Available !

IRF5803D2PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-40 ––– –––
––– -0.03 –––
––– ––– 112
––– ––– 190
-1.0 ––– -3.0
4.0 ––– –––
––– ––– -10
––– ––– -25
––– ––– -100
––– ––– 100
––– 25 37
––– 4.5 6.8
––– 3.5 5.3
––– 43 65
––– 550 825
––– 88 130
––– 50 75
––– 1110 –––
––– 93 –––
––– 73 –––
V
V/°C
m
V
S
µA
nA
nC
ns
pF
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -3.4A ‚
VGS = -4.5V, ID = -2.7A ‚
VDS = VGS, ID = -250µA
VDS = -10V, ID = -3.4A
VDS = -32V, VGS = 0V
VDS = -32V, VGS = 0V, TJ = 70°C
VGS = -20V
VGS = 20V
ID = -3.4A
VDS = -20V
VGS = -10V, See Fig. 6 & 14 ‚
VDD = -20V
ID = -1.0A
RG = 6.0
VGS = -10V, ‚
VGS = 0V
VDS = -25V
ƒ = 100kHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current(Body Diode) ––– ––– -2.0
ISM Pulsed Source Current (Body Diode) ––– ––– -27
VSD Body Diode Forward Voltage
––– ––– -1.2
trr Reverse Recovery Time (Body Diode) ––– 27 40
Qrr Reverse Recovery Charge
––– 34 50
Schottky Diode Maximum Ratings
A
V TJ = 25°C, IS = -2.0A, VGS = 0V
ns TJ = 25°C, IF = -2.0A
nC di/dt = 100A/µs ‚
Parameter
Max. Units
Conditions
If (av)
Max. Average Forward Current
3.0 A 50% Duty Cycle. Rectangular Waveform, TA =30°C
See Fig.21
ISM
Max. peak one cycle Non-repetitive
340
5µs sine or 3µs Rect. pulse
Following any rated
Surge current
70 A
10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Vfm
Vrrm
Irm
Ct
Parameter
Max. Forward Voltage Drop
Max. Working Peak Reverse Voltage
Max. Reverse Leakage Current
Max. Junction Capacitance
Max. Units
0.51
0.63
0.44 V
0.59
40 V
3.0 mA
37
405 pF
Conditions
If = 5.0A, Tj = 25°C
If = 10A, Tj = 25°C
If = 5.0A, Tj = 125°C
If = 10A, Tj = 125°C
Vr = 40V
Tj = 25°C
Tj = 125°C
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
2 www.irf.com


Part Number IRF5803D2PbF
Description Power MOSFET & Schottky Diode
Maker International Rectifier
Total Page 11 Pages
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