Datasheet Details
| Part number | IRF5803D2PbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 139.57 KB |
| Description | Power MOSFET & Schottky Diode |
| Datasheet |
 IRF5803D2PbF Datasheet
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General Description
The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications.
HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
- t1 , Rectangular Pulse Duration (sec) Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 180 Allowable Ambient Temprature - (°C) 160 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 RthJA = 62.5 °C/W DC see note (4) Square wave ( D = 0.50) 80 % Rated V R applied Average Forward Current - F(AV) I (A) Fig.21 - Maximum Allowable Ambient Temp. Vs. Forward Current Note (4) Formula used: TC = TJ - (Pd + PdREV) x RthJA ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) ; Pd.