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International Rectifier Electronic Components Datasheet

IRF5804PbF Datasheet

Power MOSFET

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l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free
l Halogen-Free
Description
These P-channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery and
load management applications.
The TSOP-6 package with its customized leadframe
produces a HEXFET® power MOSFET with RDS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and RDS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
VDSS
-40V
PD - 95503B
IRF5804PbF
HEXFET® Power MOSFET
RDS(on) max (mW)
198@VGS = -10V
334@VGS = -4.5V
ID
-2.5A
-2.0A
D1
6
A
D
D2
5D
G3
4S
Top View
TSOP-6
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-40
-2.5
-2.0
-10
2.0
1.3
0.016
± 20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
62.5
Units
°C/W
1
04/20/10


International Rectifier Electronic Components Datasheet

IRF5804PbF Datasheet

Power MOSFET

No Preview Available !

IRF5804PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-40
–––
–––
–––
-1.0
2.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.03
–––
–––
–––
–––
–––
–––
–––
–––
5.7
2.8
2.1
19
430
100
64
680
60
44
Max.
–––
–––
198
334
-3.0
–––
-10
-25
-100
100
8.5
4.2
3.2
–––
–––
–––
–––
–––
–––
–––
Units
V
V/°C
m
V
S
µA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -2.5 ‚
VGS = -4.5V, ID = -2.0A ‚
VDS = VGS, ID = -250µA
VDS = -10V, ID = -2.5A
VDS = -32V, VGS = 0V
VDS = -32V, VGS = 0V, TJ = 70°C
VGS = -20V
VGS = 20V
ID = -2.5A
VDS = -20V
VGS = -10V
VDD = -20V ‚
ID = -1.0A
RG = 6.0
VGS = -10V
VGS = 0V
VDS = -25V
ƒ = 1kHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max.
––– -2.5
––– -10
––– -1.2
24 36
32 49
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = -2.0A, VGS = 0V
TJ = 25°C, IF = -2.0A
di/dt = -100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 400µs; duty cycle 2%.
ƒ Surface mounted on 1 in square Cu board
2 www.irf.com


Part Number IRF5804PbF
Description Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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