These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
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l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free
Description
These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
IRF5804PbF Datasheet
