These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
Full PDF Text Transcription for IRF5806PbF (Reference)
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PD - 95476B IRF5806PbF l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free HEXFET® Power ...
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e in Tape & Reel Low Gate Charge Lead-Free Halogen-Free HEXFET® Power MOSFET VDSS -20V RDS(on) max 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V ID -4.0A -3.0A Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit b
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IRF5806PbF Datasheet
