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IRF5806 - Power MOSFET

General Description

New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice.10/00 8 www. irf. com.

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Full PDF Text Transcription for IRF5806 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRF5806. For precise diagrams, and layout, please refer to the original PDF.

PD - 93997 IRF5806 HEXFET® Power MOSFET q q q q Trench Technology Ultra Low On-Resistance P-Channel MOSFET Available in Tape & Reel VDSS -20V RDS(on) max 86mΩ@VGS = -4.5V...

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MOSFET Available in Tape & Reel VDSS -20V RDS(on) max 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V ID -4.0A -3.0A Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.

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