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International Rectifier Electronic Components Datasheet

IRF5N4905 Datasheet

Power MOSFET

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PD - 94163
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-1)
IRF5N4905
55V, P-CHANNEL
Product Summary
Part Number
IRF5N4905
BVDSS
-55V
RDS(on) ID
0.024-55A*
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
SMD-1
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C Continuous Drain Current
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
-55*
-36
-220
125
1.0
±20
330
-36
12.5
4.0
-55 to 150
300 (for 5 s)
2.6 (Typical)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
04/09/01


International Rectifier Electronic Components Datasheet

IRF5N4905 Datasheet

Power MOSFET

No Preview Available !

IRF5N4905
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage -55 — — V
VGS = 0V, ID = -250µA
BVDSS/TJ Temperature Coefficient of Breakdown — -0.051 — V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
— — 0.024
VGS = 10V, ID = -36A
VGS(th)
gfs
IDSS
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
-2.0 — -4.0 V
19 — — S ( )
-25
-250
µA
— — -100
— — 100 nA
— — 195
— — 45 nC
— — 75
VDS = VGS, ID = -250µA
VDS -25V, IDS = -36A
VDS = -55V ,VGS=0V
VDS = -44V,
VGS = 0V, TJ =125°C
VGS = -20V
VGS = 20V
VGS =-10V, ID = -36A
VDS = -44V
— — 35
— — 165
— — 95 ns
VDD = -28V, ID = -36A,
VGS =-10V, RG = 2.5
— — 130
— 5.9 — nH
Measured from the center of
drain pad to center of source pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
— 3633 —
— 1312 —
— 505 —
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — -55* A
ISM Pulse Source Current (Body Diode)
— — -220
VSD Diode Forward Voltage
— — -1.6 V
trr Reverse Recovery Time
— — 120 ns
QRR Reverse Recovery Charge
— — 365 nC
Tj = 25°C, IS = -36A, VGS = 0V
Tj = 25°C, IF = -36A, di/dt 100A/µs
VDD -25V
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
— — 1.0 °C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com


Part Number IRF5N4905
Description Power MOSFET
Maker International Rectifier
Total Page 7 Pages
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