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International Rectifier Electronic Components Datasheet

IRF60DM206 Datasheet

N-Channel Power MOSFET

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Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
Benefits
Improved gate, avalanche and dynamic dv/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dv/dt and di/dt capability
Lead-free, RoHS compliant
StrongIRFET™
IRF60DM206
DirectFET® N-Channel Power MOSFET
VDSS
RDS(on) typ.
max
ID
60V
2.2m
2.9m
130A
 
S
D
G
SS
SS
ME
 
D
DirectFET®
ISOMETRIC
Base part number
IRF60DM206
Package Type
DirectFET® ME
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRF60DM206
8
ID = 80A
7
6
5
4 TJ = 125°C
3
TJ = 25°C
2
1
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
140
120
100
80
60
40
20
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 2. Maximum Drain Current vs. Case Temperature
1 www.irf.com © 2015 International Rectifier
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June 04, 2015


International Rectifier Electronic Components Datasheet

IRF60DM206 Datasheet

N-Channel Power MOSFET

No Preview Available !

  
IRF60DM206
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy 
EAS (Thermally limited) Single Pulse Avalanche Energy 
IAR Avalanche Current 
EAR Repetitive Avalanche Energy 
Thermal Resistance
Symbol
Parameter
RJA
RJA
RJA
RJC
RJ-PCB
Junction-to-Ambient 
Junction-to-Ambient 
Junction-to-Ambient 
Junction-to-Case 
Junction-to-PCB Mounted
  
Max.
130
82
530
96
0.78
± 20
-55 to + 150
 
Units
A
 
W
W/°C
V
°C
  
81
154
See Fig 15, 15, 23a, 23b
mJ
A
mJ
 
Typ.
–––
12.5
20
–––
0.75
 
Max.
45
–––
–––
1.3
–––
 
Units
°C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
RG Internal Gate Resistance
Notes:
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Used double sided cooling , mounting pad with large heatsink.
   
 
  
Min. Typ. Max. Units
Conditions
60 ––– ––– V VGS = 0V, ID = 250µA
––– 38 ––– mV/°C Reference to 25°C, ID = 1.0mA
––– 2.2 2.9 mVGS = 10V, ID = 80A
––– 2.7 –––  mVGS = 6.0V, ID = 40A
2.1 3.0  3.7
V VDS = VGS, ID = 150µA
––– ––– 1.0 µA VDS = 60V, VGS = 0V
––– ––– 150
VDS = 60V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– 0.8 –––
TC measured with thermocouple mounted to top (Drain) of part.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB with small clip
heatsink (still air)
Mounted on minimum footprint full size
  board with metalized back and with
small clip heatsink (still air)
2 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
June 04, 2015


Part Number IRF60DM206
Description N-Channel Power MOSFET
Maker International Rectifier
Total Page 12 Pages
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