e Waveform Fig 13b. Gate Charge Test Circuit IRF6215 Peak Diode Recovery dv/dt Test Circuit D.U.T* + ƒ + Circuit Layout Considerations
* Low Stray Inductance

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to a.

l l D VDSS = -150V G S RDS(on) = 0.29Ω ID = -13A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching .

IRF621

IRF6215L

IRF6215LPBF

IRF6215PBF

IRF6215S

IRF6215SPBF

IRF6216

IRF6216PBF

IRF6216PBF-1

IRF6217

IRF6217PBF

IRF6217PBF-1

IRF6218