IRF6217PBF Key Features
- Lead-Free
- IRF6217PbF HEXFET® Power MOSFET RDS(on) max 2.4W@VGS =-10V ID -0.7A VDSS -150V Benefits Low Gate to Drain Ch
- Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001)
- Fully Characterized Avalanche Voltage and Current