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IRF634NSPbF - HEXFET Power MOSFET

This page provides the datasheet information for the IRF634NSPbF, a member of the IRF634NLPbF HEXFET Power MOSFET family.

Description

l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 HEXFET 1 - GATE LEAD.

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Full PDF Text Transcription

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PD - 95342 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts.
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