IRF634N - Power MOSFET

Vishay

General Description

Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

Advanced Process Technology.
Dynamic dV/dt Rating.
175 °C Operating Temperature.
Fast Switching.
Fully Avalanche Rated.
Ease of Paralleling.
Simple Drive Requirements.
Lead (Pb)-free Available Available RoHS.

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IRF634N power mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	IRF634N
Manufacturer	Vishay
File Size	126.00 KB
Description	Power MOSFET
Datasheet	IRF634N Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
IRF634N	Power MOSFET	International Rectifier
IRF634NL	Power MOSFET	International Rectifier
IRF634NLPbF	HEXFET Power MOSFET	International Rectifier
IRF634NPbF	HEXFET Power MOSFET	International Rectifier
IRF634NS	Power MOSFET	International Rectifier

Other Datasheets by Vishay

Part Number	Description
IRF634NL	Power MOSFET
IRF634NS	Power MOSFET
IRF634	Power MOSFET
IRF634S	Power MOSFET
IRF630	Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 34 Qgs (nC) 6.5 Qgd (nC) 16 Configuration Single 0.435 I2PAK (TO-262) TO-220 D S D G S D GG D2PAK (TO-263) S N-Channel MOSFET GD S FEATURES • Advanced Process Technology • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.