power mosfet.
e Test Circuit
6
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IRF644N/644NS/644NL
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
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Circuit Layout Considerations
* Low Stray Inductance
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The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to a.
l Fifth Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design t.
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