≤60µs PULSE WIDTH Tj = 150°C 0.1 1 10 100 1000 100 1000 VDS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000.

 l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l Typical values (unless .

The IRF6626 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package .

IRF6620

IRF6620PBF

IRF6620TRPBF

IRF6621

IRF6621PbF

IRF6621TRPbF

IRF6622

IRF6622PBF

IRF6622TRPBF

IRF6623

IRF6623PBF

IRF6623TRPBF

IRF6626PbF