Description
The IRF6626 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Features
- 0
0.01 VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
80
VGS(th) Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 50µA
70 60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C)
ID, Drain Current (A)
-75
-50
-25
0
25
50
75
100 125 150
T J , Temperature ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
100
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Threshold Voltag.
IRF6626_InternationalRectifier.pdf
