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IRF6626PbF Datasheet DirectFET Power MOSFET

Manufacturer: International Rectifier (now Infineon)

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General Description

The IRF6626PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Overview

PD - 97218 IRF6626PbF IRF6626TRPbF l RoHs Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 4.0mΩ@ 10V 5.2mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 19nC 6.7nC 1.6nC 5.4nC 13nC 1.8V ST DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.

Key Features

  • (on) 100µsec 10 1msec 10msec 1 0.1 Ta = 25°C Tj = 150°C Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 ID = 50µA 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 13. Threshold Voltage vs. Temperature ID TOP 5.6A 8.4A BOTTOM 13A EAS , Single Pulse Avalanche Energy (mJ) 40 20 www. irf. com 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C) Fig 14. Maximum Av.

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