Description
The IRF6623PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Features
- d(off) tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
Id Vds Vgs
L
0
DUT 1K
VCC
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 16a. Gate Charge Test Circuit
Fig 16b. Gate Charge Waveform
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5
IRF6623PbF
D. U. T
Driver Gate Drive
+
P. W. Period
D=
P. W. Period VGS=10V.
- -
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Circuit Layout Considerations.
- Low Stray Inductance.
- Ground Plane.
- Low Leakage Inductance Current Transformer.
- D. U. T. ISD Waveform.
IRF6623PBF Datasheet
