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IRF6621 - Power MOSFET

Datasheet Summary

Description

The IRF6621 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 60 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 TJ , Junction Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 60 Fig 13. Typical Threshold Voltage vs. Junction Temperature ID 3.0A 4.3A BOTTOM 9.6A TOP EAS, Single Pulse Avalanche Energy (mJ).

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PD - 97005 IRF6621 DirectFET™ Power MOSFET ‚ l l l l l l l l l RoHs Compliant Containing No Lead and Bromide  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques  Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 4.2nC RDS(on) Qgs2 1.0nC RDS(on) Qoss 6.9nC 30V max ±20V max 7.0mΩ@ 10V 9.3mΩ@ 4.5V Qrr 10nC Vgs(th) 1.8V 11.7nC SQ Applicable DirectFET Outline and Substrate Outline (see p.
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