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IRF6621PbF - Power MOSFET

Datasheet Summary

Description

The IRF6621PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • 0.1 1.0 10.0 100.0 VDS, Drain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area 2.5 Typical VGS(th) Gate threshold Voltage (V) ID, Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ) 50 40 2.0 ID = 250µA 30 20 1.5 10 0 25 50 75 100 125 150 TC, Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 60 50 40 1.0 -75 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature ( °C ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID TOP 3.0A 4.3A.

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PD - 97093 IRF6621PbF IRF6621TRPbF DirectFET™ Power MOSFET ‚ l RoHS Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 7.0mΩ@ 10V 9.3mΩ@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 11.7nC 4.2nC 1.0nC 10nC 6.9nC 1.8V SQ DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
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