Datasheet4U Logo Datasheet4U.com

IRF6620 - HEXFETPower MOSFET

General Description

The IRF6620 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

Key Features

  • godr Fig 15. Gate Charge Test Circuit Fig 16. Gate Charge Waveform www. irf. com 5 IRF6620 D. U. T Driver Gate Drive + P. W. Period D= P. W. Period VGS=10V.
  • + Circuit Layout Considerations.
  • Low Stray Inductance.
  • Ground Plane.
  • Low Leakage Inductance Current Transformer.
  • D. U. T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D. U. T. VDS Waveform Diode Recovery dv/dt ‚ -.
  • +  RG.
  • d.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRF6643TRPbF DIGITAL AUDIO MOSFET IRF
IRF6644PbF IR MOSFET Infineon
IRF6648PbF Power MOSFET Infineon
IRF6648TRPbF Power MOSFET Infineon
IRF6662PbF Power MOSFET IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6620PBF Power MOSFET
IRF6620TRPBF Power MOSFET
IRF6621 Power MOSFET
IRF6621PbF Power MOSFET
IRF6621TRPbF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 95823A IRF6620 l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Compatible with Existing Surface Mount Techniques HEXFET® Power MOSFET VDSS 20V RDS(on) max 2.7mΩ@VGS = 10V 3.6mΩ@VGS = 4.5V Qg(typ.) 28nC MX Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT DirectFET™ ISOMETRIC Description The IRF6620 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.