Description
The IRF6621PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Features
- 0.1 1.0
10.0
100.0
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
2.5
Typical VGS(th) Gate threshold Voltage (V)
ID, Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ)
50
40
2.0 ID = 250µA
30
20 1.5
10
0 25 50 75 100 125 150 TC, Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
60
50
40
1.0 -75 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID TOP 3.0A
4.3A.
IRF6621TRPbF Datasheet
