IRF6621TRPbF Datasheet | International Rectifier

Description The IRF6621Pb F bines the latest HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The Direct FET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6621Pb F balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6621Pb F has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the control FET socket. Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS Gate-to-Source Voltage e Continuous Drain Current, VGS @ 10V e Continuous Drain Current, VGS @ 10V f Continuous Drain Current, VGS @ 10V g Pulsed Drain Current h Single Pulse Avalanche Energy Ãg Avalanche Current 25 ID = 12A 12 10 ID= 9.6A Max. 30 ±20 12 9.6 55 96 13 9.6 VDS= 24V VDS= 15V Units V A m J A Typical RDS(on) (mΩ) VGS, Gate-to-Source Voltage (V) TJ = 125°C 10 5 2.0 TJ = 25°C 4.0 6.0 8.0 VGS, Gate-to-Source Voltage (V) Fig 1. Typical On-Resistance Vs. Gate Voltage Notes:  Click on this section to link to the appropriate technical paper. ‚ Click on this section to link to the Direct FET Website. - Surface mounted on 1 in. square Cu board, steady...