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IRF6620PBF - Power MOSFET

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Description

The IRF6620PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.

Features

  • + V - DD A D. U. T VGS Pulse Width < 1µs Duty Factor < 0.1% 0.01Ω Fig 13a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 14a. Switching Time Test Circuit 90% VDS 10% VGS I AS td(on) tr td(off) tf Fig 13b. Unclamped Inductive Waveforms Fig 14b. Switching Time Waveforms Id Vds Vgs L 0 DUT 1K VCC Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 15a. Gate Charge Test Circuit Fig 15b. Gate Charge Waveform www. irf. com 5 Free Datasheet http://www. Datasheet4U. com IRF6620PbF D. U. T Driver Gate Dr.

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PD - 97092 IRF6620PbF IRF6620TRPbF l l l l l l l l l RoHS Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  DirectFET™ Power MOSFET ‚ VDSS 20V RDS(on) max 2.7mΩ@VGS = 10V 3.6mΩ@VGS = 4.5V Qg(typ.) 28nC MX Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details) SQ SX ST MQ MX MT DirectFET™ ISOMETRIC Description The IRF6620PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.
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