IRF6620PBF Datasheet | International Rectifier

Description The IRF6620Pb F bines the latest HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The Direct FET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6620Pb F balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6620Pb F has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6620Pb F offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TC = 25°C PD @TA = 70°C PD @TA = 25°C EAS IAR TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS Continuous Drain Current, VGS Pulsed Drain Current Power Dissipation Continuous Drain Current, VGS @ 10V Max. 20 ±20 150 27 22 220 89 1.8 Units V k Power Dissipation h Power Dissipation h e k @ 10VÃh @ 10V h W m J A W/°C °C Single Pulse Avalanche Energy Avalanche Current Ãg f 2.8 39 22 0.017 -40 to + 150 Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance RθJA RθJA RθJA RθJC RθJ-PCB hl Junction-to-Ambient il Junction-to-Ambient jl...